What is the structure of linear inheritance circuit?

Linear integrated circuit is an integrated circuit based on amplifier. The word "linear" means that the response of the amplifier to the input signal usually presents a linear relationship. Later, this kind of circuit includes many nonlinear circuits such as oscillator, timer and data converter, as well as the circuit combining digital and linear functions. Because the information processed involves continuously changing physical quantities (analog quantities), people also call this kind of circuit analog integrated circuit.

In terms of manufacturing process, most linear integrated circuits are manufactured by standard bipolar process. In order to obtain high-performance circuits, some modifications or additional manufacturing processes are sometimes made on the basis of standard processes, so as to make various components and devices with different performances on the same chip.

Linear integrated circuits are generally manufactured by standard bipolar process. In order to obtain high-performance circuits, some modifications or additional manufacturing processes are sometimes made on the basis of standard processes, so as to make various components and devices with different performances on the same chip. The technology of making high performance junction field effect transistor on bipolar chip.

When the NPN tube on the chip is formed, the low concentration p-type channel and high concentration n+ type gate region are formed by doping with two ion implantation techniques respectively. The gate drain breakdown voltage can reach 50 ~ 60 VOLTS, and the pinch off voltage can be controlled at about 1 volt. The common breakdown diode uses the EB junction of NPN transistor, and its breakdown phenomenon occurs on the junction surface.

The subsurface breakdown diode is a high concentration p+ layer made by ion implantation under the n+ emission region, and an n+-p+ junction is formed deep below the surface. The breakdown voltage of this transistor is lower than that of the surface junction, the breakdown process is not affected by the surface condition, the noise is low, and it has good long-term stability.